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18529516814/0755-83206150/83258002
IS43DR86400E-3DBLI-TR
  • image of 存储器>IS43DR86400E-3DBLI-TR
  • image of 存储器>IS43DR86400E-3DBLI-TR
IS43DR86400E-3DBLI-TR
Memory
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT
-
Tape & Reel (TR)
100
-
: 10.44183
: 100

2

10.44183

20.88366

image of 存储器>IS43DR86400E-3DBLI-TR
image of 存储器>IS43DR86400E-3DBLI-TR
IS43DR86400E-3DBLI-TR
IS43DR86400E-3DBLI-TR
Memory
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT
-
Tape & Reel (TR)
100
-
PDF(1)
TYPEDESCRIPTION
MfrISSI, Integrated Silicon Solution Inc
Series-
PackageTape & Reel (TR)
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR2
Memory Size512Mb (64M x 8)
Memory InterfaceParallel
Clock Frequency333 MHz
Write Cycle Time - Word, Page15ns
Access Time450 ns
Voltage - Supply1.7V ~ 1.9V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case60-TFBGA
Supplier Device Package60-TWBGA (8x10.5)
Base Product NumberIS43DR86400
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