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18529516814/0755-83206150/83258002
R1RW0416DGE-2PR-B1
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R1RW0416DGE-2PR-B1
存储器
Renesas Electronics America Inc
IC SRAM 4MBIT P
-
Tube
100
-
: 32.06204
: 100

108

32.06204

3462.70032

image of 存储器>R1RW0416DGE-2PR-B1
image of 存储器>R1RW0416DGE-2PR-B1
R1RW0416DGE-2PR-B1
R1RW0416DGE-2PR-B1
存储器
Renesas Electronics America Inc
IC SRAM 4MBIT P
-
Tube
100
-
PDF(1)
TYPEDESCRIPTION
MfrRenesas Electronics America Inc
Series-
PackageTube
Part StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM
Memory Size4Mb (256K x 16)
Memory InterfaceParallel
Write Cycle Time - Word, Page12ns
Access Time12 ns
Voltage - Supply3V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package44-SOJ
Base Product NumberR1RW0416
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