| ： | W989D2DBJX6E |
|---|---|
| ： | 存储器 |
| ： | Winbond Electronics |
| ： | 512MB LPSDR, X3 |
| ： | - |
| ： | - |
| ： | 100 |
| ： | - |
240
8.81713
2116.1112
| TYPE | DESCRIPTION |
| Mfr | Winbond Electronics |
| Series | - |
| Package | Tube |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | LVCMOS |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
